Samsung 250GB 2.5" 750 EVO MZ-750250BW
$129.00
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QUICK OVERVIEW
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PC users are choosing high-speed SSDs for better computing performance and reliability. The Samsung 750 EVO SSD, with a SATA interface, is an outstanding high-performance choice for an enhanced everyday computing experience. With high sequential read and write speeds and exciting random read and write speeds, you will find yourself handling multitasking faster than before. The 750 EVO boasts a fast computing experience thanks to TurboWrite technology and RAPID mode.
- Heighten your computing experience with fast performance
The Samsung 750 EVO SSD, with a SATA interface, is an outstanding high-performance choice for an enhanced everyday computing experience. With high sequential read and write speeds and exciting random read and write speeds, you will find yourself handling multitasking faster than before. The sequential write performance is measured under the TurboWrite mode. - Enjoy superior computing for everyday use
The 750 EVO boasts a fast computing experience thanks to TurboWrite technology and RAPID mode. TurboWrite technology accelerates sequential write speeds by creating a write buffer inside the SSD. - Secure data through advanced data encryption
An AES-256-bit hardware-based full disk encryption engine secures your data with significantly less performance degradation often experienced with software-based encryption. And the 750 EVO is compliant with TCG Opal v2.0 standards and IEEE 1667 protocol.
| Model Code | | MZ-750250BW |
| Usage Application(s) | | Client PCs |
| Capacity | | 250GB |
| Dimensions (L*W*H) | | 100 x 69.85 6.8 (mm) |
| Interface | | SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s) |
| Form Factor | | 2.5 inch |
| Controller | | Samsung MGX controller |
| NAND Flash Memory | | Samsung Nand Flash Memory |
| DRAM Cache Memory | | 256MB DDR3 |
| Performance* | Sequential Read: | Max. 540MB/s |
| Sequential Write**: | Max. 520MB/s | |
| 4KB Random Read (QD1): | Max. 10,000 IOPS | |
| 4KB Random Write (QD1): | Max. 35,000 IOPS | |
| 4KB Random Read (QD32): | Max. 97,000 IOPS | |
| 4KB Random Write (QD32): | Max. 88,000 IOPS | |
| Data Security | | AES 256-bit Full Disk Encryption (FDE); TCG/Opal V2.0; |
| Weight | | Max. 45g |
| Power Consumption*** | Active Read (Average): | 2.4W |
| Active Write (Average): | 2.8W | |
| Idle: | 50mW | |
| Device Sleep: | 6mW | |
| Supporting Featurs | | TRIM (Required OS support), Garbage Collection, S.M.A.R.T |
| Temperature | Operating: | 0°C to 70°C |
| Non-Operating: | -40°C to 85°C | |
| Humidity | | 5% to 95%, non-condensing |
| Vibration | Non-Operating: | 20~2000Hz, 20G |
| Shock | Non-Operating: | 1500G, Duration 0.5m sec, 3 axis |
| Reliability | | MTBF: 1.5 million hours |
| TBW | | 70TBW |
| Warranty | | 3 Years |
Main Specifications
Model Code
MZ-750250BW
Usage Application(s)
Client PCs
Capacity
250GB
Dimensions (L*W*H)
100 x 69.85 6.8 (mm)
Interface
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor
2.5 inch
Controller
Samsung MGX controller
NAND Flash Memory
Samsung Nand Flash Memory
DRAM Cache Memory
256MB DDR3
Performance*
Sequential Read:
Max. 540MB/s
Sequential Write**:
Max. 520MB/s
4KB Random Read (QD1):
Max. 10,000 IOPS
4KB Random Write (QD1):
Max. 35,000 IOPS
4KB Random Read (QD32):
Max. 97,000 IOPS
4KB Random Write (QD32):
Max. 88,000 IOPS
Data Security
AES 256-bit Full Disk Encryption (FDE);
TCG/Opal V2.0;
Weight
Max. 45g
Power Consumption***
Active Read (Average):
2.4W
Active Write (Average):
2.8W
Idle:
50mW
Device Sleep:
6mW
Supporting Featurs
TRIM (Required OS support), Garbage Collection, S.M.A.R.T
Temperature
Operating:
0°C to 70°C
Non-Operating:
-40°C to 85°C
Humidity
5% to 95%, non-condensing
Vibration
Non-Operating:
20~2000Hz, 20G
Shock
Non-Operating:
1500G, Duration 0.5m sec, 3 axis
Reliability
MTBF: 1.5 million hours
TBW
70TBW
Warranty
3 Years
Model Code
MZ-750250BW
Usage Application(s)
Client PCs
Capacity
250GB
Dimensions (L*W*H)
100 x 69.85 6.8 (mm)
Interface
SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor
2.5 inch
Controller
Samsung MGX controller
NAND Flash Memory
Samsung Nand Flash Memory
DRAM Cache Memory
256MB DDR3
Performance*
Sequential Read:
Max. 540MB/s
Sequential Write**:
Max. 520MB/s
4KB Random Read (QD1):
Max. 10,000 IOPS
4KB Random Write (QD1):
Max. 35,000 IOPS
4KB Random Read (QD32):
Max. 97,000 IOPS
4KB Random Write (QD32):
Max. 88,000 IOPS
Data Security
AES 256-bit Full Disk Encryption (FDE);
TCG/Opal V2.0;
Weight
Max. 45g
Power Consumption***
Active Read (Average):
2.4W
Active Write (Average):
2.8W
Idle:
50mW
Device Sleep:
6mW
Supporting Featurs
TRIM (Required OS support), Garbage Collection, S.M.A.R.T
Temperature
Operating:
0°C to 70°C
Non-Operating:
-40°C to 85°C
Humidity
5% to 95%, non-condensing
Vibration
Non-Operating:
20~2000Hz, 20G
Shock
Non-Operating:
1500G, Duration 0.5m sec, 3 axis
Reliability
MTBF: 1.5 million hours
TBW
70TBW
Warranty
3 Years
