Kingston Valueram 8gb (1x8gb) Ddr4 2400mhz Ecc Registered Cl17 1.2v Dimm 1rx8 X 72-bit Pc4-2400

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243274
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Server Memory KVR24R17S8/8

Kingston ValueRAM 8GB (1x8GB) DDR4 2400MHz ECC Registered CL17 1.2V DIMM 1Rx8 x 72-Bit PC4-2400 Server Memory

ValueRAM's KVR24R17S8/8 is a 1G x 72-bit (8GB) DDR4-2400 CL17 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. 
The SPD is programmed to JEDEC standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

Features
- Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP - 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported

Kingston ValueRAM 8GB (1x8GB) DDR4 2400MHz ECC Registered CL17 1.2V DIMM 1Rx8 x 72-Bit PC4-2400 Server Memory

ValueRAM's KVR24R17S8/8 is a 1G x 72-bit (8GB) DDR4-2400 CL17 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components.
The SPD is programmed to JEDEC standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

Features
- Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP - 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported