Samsung 850BW EVO 2TB SSD 7mm 3D V-NAND 540/ 520 R/ W 5 yr MZ-75E2T0BW

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What is 3D V-NAND and how does it differ from existing technology?
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.
World’s 1st 2 TB SSD for extensive workloads
World’s 1st 2 TB SSD for extensive workloads
Introducing the world’s first 2 TB SSD for client PCs—the SSD 850 EVO 2 TB. Powered by 3D V-NAND, you can store your programs and data onto one drive, which is especially useful when editing and archiving a large number of Full HD multimedia files. The end result is fast data access times, programme load times, and multitasking—increasing overall computing speed for higher productivity. Enjoy better PC performance with a single spacious SSD.*

*When compared to an environment using a combination of an HDD as a storage drive and an SSD as a boot drive.
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. 
*PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO)
**Random Write (QD32, 120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO)
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.
*TBW: Total Bytes Written
**TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),15 0(850 EVO 500/1 TB)
***Sustained Performance (250 GB): 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test
Get into the fast lane with the improved RAPID mode
Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
*PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)
Compute longer with improved energy efficiency backed by 3D V-NAND
Compute longer with improved energy efficiency backed by 3D V-NAND
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
*Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)
Secure valuable data through advanced AES 256 encryption
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
Secure valuable data through advanced AES 256 encryption
Protect against overheating with a highly responsive Dynamic Thermal Guard
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.
Protect against overheating with a highly responsive Dynamic Thermal Guard
Level up to the 850 EVO simply without any hassle
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimise and manage your system best suited for your SSD.
Level up to the 850 EVO simply without any hassle
Acquire an integrated in-house solution consisting of top-quality components
Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration. The result – enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller.
Acquire an integrated in-house solution consisting of top-quality components

General Feature

  • Application

    Client PCs
  • Capacity

    2,000 GB (1 GB = 1 Billionbyte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • Form Factor

    2.5 inch
  • Interface

    SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD)

    100.00 x 69.85 x 6.80 (mm)
  • Weight

    Max 55 g
  • Storage Memory

    Samsung V-NAND
  • Controller

    Samsung MHX Controller
  • Cache Memory

    Samsung 2 GB Low Power DDR3

Special Feature

  • TRIM Support

    TRIM Supported
  • S.M.A.R.T Support

    S.M.A.R.T Supported
  • GC (Garbage Collection)

    Auto Garbage Collection Algorithm
  • Encryption Support

    AES 256 bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
  • WWN Support

    World Wide Name supported
  • Device Sleep Mode Support

    Yes

SHOW MORE SPECS

Performance

  • Sequential Read

    Up to 540 MB/sec Sequential Read * Performance may vary based on system hardware & configuration
  • Sequential Write

    Up to 520 MB/sec Sequential Write * Performance may vary based on system hardware & configuration
  • Random Read (4KB, QD32)

    Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration
  • Random Write (4KB, QD32)

    Up to 90,000 IOPS Random Write * Performance may vary based on system hardware & configuration
  • Random Read (4KB, QD1)

    Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
  • Random Write (4KB, QD1)

    Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration

Environment

  • Average Power Consumption (system level)

    *Average: 4.7 W *Maximum: 7.2 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
  • Power consumption (Idle)

    Max. 60 mWatts *Actual power consumption may vary depending on system hardware & configuration
  • Allowable Voltage

    5 V ± 5% Allowable voltage
  • Reliability (MTBF)

    1.5 Million Hours Reliability (MTBF)
  • Operating Temperature

    0 - 70 °C
  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • Installation Kit

    Not Available

Software

  • Management SW

    Magician Software for SSD management

Warranty

  • Warranty

    5 Years Limited Warranty or 300 TBW Limited Warranty
Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.

3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

Incredible Read/Write Speeds
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
* Performance compared to 3-Bit MLC-class SSD drives

Enhanced RAPID mode
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
* Compared to same drive w/out RAPID enabled

Guaranteed Endurance and reliability
The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.
* Measured by Terrabytes Written (TBW)
** Measured with Sustained Performance 12hr Random Write Test
***