0 Items - $0.00

Samsung SSD 983 DCT 1,920GB V-NAND 3bit MLC, MZ-1LB1T9NE

Rated /5 based on customer reviews

SKU: 284252

Brand: SAMSUNG

Manufacturer Link

MPN: MZ-1LB1T9NE

Manufacturer Product Link

Warranty: 1 Year Manufacturer's return to base

Availability: In stock

Freight Estimate:

$840.00
Buy Now And Earn Reward Points!
Qty:
Untitled 1 The Samsung SSD 983 DCT M.2 presents outstanding performance with instant responsiveness to the host system, by applying the Peripheral Component Interconnect Express (PCIe) 3.0 interface standard, as well as highly efficient Non-Volatile Memory Express (NVMe) Protocol. The Samsung SSD 983 DCT M.2 delivers wide bandwidth of up to 3,000MB/s for sequential read speed and up to 1,400MB/s for sequential write speed under up to 8.0 W power. With the help of Toggle 3.0 NAND Flash interface, the Samsung SSD 983 DCT M.2 delivers random performance of up to 480K IOPS for random 4 KB read and up to 42K IOPS for random 128 KB write in the sustained state.

  • Sequential Reads: up to 3,000 MB/s3)
  • Sequential Writes: up to 1,400 MB/s3)
  • Random Reads: up to 480K IOPS
  • Random Writes: up to 42K IOPS
  • Random Reads: up to 85 us
  • Random Writes: up to 50 us
  • Sequential Reads: up to 15 us
  • Sequential Writes: up to 15 us
  • Drive Ready Time: 8 s
  • TBW: 1,920 GB: 2,733 TB7)
  • Non-Recoverable Read Error: 1 sector per 1017 bits read
  • MTBF: 2,000,000 hours
The Samsung SSD 983 DCT M.2 presents outstanding performance with instant responsiveness to the host system, by applying the Peripheral Component Interconnect Express (PCIe) 3.0 interface standard, as well as highly efficient Non-Volatile Memory Express (NVMe) Protocol.The Samsung SSD 983 DCT M.2 delivers wide bandwidth of up to 3,000MB/s for sequential read speed and up to 1,400MB/s for sequential write speed under up to 8.0 W power. With the help of Toggle 3.0 NAND Flash interface, the Samsung SSD 983 DCT M.2 delivers random performance of up to 480K IOPS for random 4 KB read and up to 42K IOPS for random 128 KB write in the sustained state.
⚫Sequential Reads: up to 3,000 MB/s3)
⚫Sequential Writes: up to 1,400 MB/s3)
⚫Random Reads: up to 480K IOPS
⚫Random Writes: up to 42K IOPS
⚫Random Reads: up to 85 us
⚫Random Writes: up to 50 us
⚫Sequential Reads: up to 15 us
⚫Sequential Writes: up to 15 us
⚫Drive Ready Time: 8 s
⚫TBW: 1,920 GB: 2,733 TB7)
⚫Non-Recoverable Read Error: 1 sector per 1017 bits read
⚫MTBF: 2,000,000 hours