Kingston 8gb (1x8gb) Ddr4 Sodimm 2666mhz Cl19 1.2v Unbuffered Valueram Single Stick Notebook Laptop
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Memory KVR26S19S8/ 8
Product Technical Specification
| SKU | KVR26S19S8/8 |
| EAN/UPC Code | 740617280630 |
| Memory Capacity | 8GB |
| Model/Series/Type | ValueRAM |
| Brand | Kingston |
| CASLatency | CL19 |
| Chip Organization | x8 |
| Country of Origin | China, Taiwan |
| Form Factor | DDR4 |
| Memory Depth | 2G |
| Memory Voltage | 1.2v |
| Module Type | SODIMM |
| Operating Temperature | 0°C to 85°C |
| Pins | 260 Pin |
| Product Type/Family | DRAM |
| RAM Memory Type | Non-ECC |
| Rank | 1R (Single Rank) |
| Speed | 2666MHz (PC4-21300) |
| Warranty | Lifetime |
| Weight | 9g |
Kingston 8GB (1x8GB) DDR4 SODIMM 2666MHz CL19 1.2V Unbuffered ValueRAM Single Stick Notebook Laptop Memory
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
This document describes ValueRAM's KVR26S19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, non-ECC, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
